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Bulletin PD-21080 08/05
60EPU04PBF 60APU04PbF
Ultrafast Soft Recovery Diode
Features * Ultrafast Recovery * 175C Operating Junction Temperature * Lead-Free ("PbF" suffix) Benefits * Reduced RFI and EMI * Higher Frequency Operation * Reduced Snubbing * Reduced Parts Count Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses.
trr = 50ns (typ) IF(AV) = 60Amp VR = 400V
Absolute Maximum Ratings Parameters
VR IF(AV) IFSM IFRM TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, TC = 127C Single Pulse Forward Current, TC = 25C Maximum Repetitive Forward Current Operating Junction and Storage Temperatures
Max
400 60 600 120 - 55 to 175
Units
V A
C
Square Wave, 20kHz
Case Styles
60EPU04PBF
60APU04PbF
CATHODE TO BASE 2
CATHODE TO BASE 2
1
3
1 ANODE
3 ANODE
CATHODE
ANODE
TO-247AC (Modified) www.irf.com
TO-247AC 1
60EPU04PBF, 60APU04PbF
Bulletin PD-21080 08/05
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage
Min Typ Max Units Test Conditions
400 V V V V A mA pF nH IR = 100A IF = 60A IF = 60A, TJ = 175C IF = 60A, TJ = 125C VR = V R Rated TJ = 150C, VR = V R Rated VR = 400V Measured lead to lead 5mm from package body
1.05 1.25 0.87 1.03 0.93 1.10 50 3.5 50 2 -
IR
Reverse Leakage Current
-
CT LS
Junction Capacitance Series Inductance
-
Dynamic Recovery Characteristics @ TJ = 25C (unless otherwise specified)
Parameters
t rr Reverse Recovery Time
Min Typ Max Units Test Conditions
50 85 145 8.8 15.4 375 1120 60 nC A ns IF = 1A, diF/dt = 200A/s, VR = 30V TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C IF = 60A VR = 200V diF /dt = 200A/s
IRRM
Peak Recovery Current
-
Qrr
Reverse Recovery Charge
-
Thermal - Mechanical Characteristics
Parameters
RthJC RthCS Wt Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Weight 0.2 5.5 0.2 T Mounting Torque Marking Device
Mounting Surface, Flat, Smooth and Greased
Min
Typ
Max
0.70
Units
K/W
g (oz) 2.4 (20) N*m (lbf.in)
1.2 (10)
60EPU04, 60APU04
2
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60EPU04PBF, 60APU04PbF
Bulletin PD-21080 08/05
1000
Reverse Current - I R (A)
1000
T J = 175C
100
125C
10 1 0.1 0.01 0.001
25C
Instantaneous Forward Current - I F (A)
100
T = 175C J T = 125C J T = 25C J
0
100
200
300
400
Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
1000
Junction Capacitance - C T (pF)
10
T J = 25C
100
1 0 0.5 1 1.5 2 2.5
Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics
10 1 10 100 1000
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
1
(C/W)
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance)
Thermal Impedance Z
thJC
PDM
0.1
t1 t2 Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
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3
60EPU04PBF, 60APU04PbF
Bulletin PD-21080 08/05
180
Allowable Case Temperature (C) Average Power Loss ( Watts )
100 80
RMS Limit
160 140 120 Square wave (D = 0.50) 80% Rated Vr applied 100
see note (3)
DC
60 40 20 0
D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC
80 0 20 40 60 80 100
Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
0
20
40
60
80
100
Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics
200 180 160 140 120 100 80 60 100
Vr = 400V Tj = 125C Tj = 25C
3500 3000
IF = 120A IF = 60A IF = 40A
Qrr ( nC )
Vr = 400V Tj = 125C Tj = 25C
2500 2000 1500 1000 500 0 100
di F /dt (A/s ) Fig. 8 - Typical Stored Charge vs. di F /dt
trr ( ns )
IF = 120A IF = 60A IF = 40A
di F /dt (A/s )
1000
1000
Fig. 7 - Typical Reverse Recovery time vs. di F /dt
(3) Formula used: TC = TJ - (Pd + PdREV) x R thJC ; Pd = Forward Power Loss = I F(AV) x VFM @ (I F(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = V R1 x IR (1 - D); I R @ VR1 = 80% rated VR
4
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60EPU04PBF, 60APU04PbF
Bulletin PD-21080 08/05
Reverse Recovery Circuit
VR = 200V
0.01 L = 70H D.U.T.
di F /dt dif/dt ADJUST
D G IRFP250 S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
IF 0
t rr ta tb
4
2
Q rr I RRM
0.5 I RRM di(rec)M/dt 0.75 I RRM
5
1
/dt di fF/dt
4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr
1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 I RRM extrapolated to zero current
Fig. 10 - Reverse Recovery Waveform and Definitions
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5
60EPU04PBF, 60APU04PbF
Bulletin PD-21080 08/05
Outline Table
60EPU04PBF
15 .90 (0.626 ) 15 .30 (0.602 ) 5. 70 (0 .225) 5.30 ( 0.208) 20.30 (0 .800) 19.70 (0 .775) 5.50 ( 0.217) 4. 50 (0 .17 7) 1 3 (2 PLCS.)
1 3 ANODE BASE COMMON CATHODE 2
3. 65 (0 .144) 3. 55 (0 .139)
DIA.
5. 30 (0.20 9) 4.70 ( 0.185) 2.5 ( 0.098)
1.5 ( 0.059)
14. 80 ( 0.583)
14 .20 (0 .559 )
CATHODE
4. 30 (0.17 0) 3. 70 (0.14 5) 2. 20 (0 .087)
1. 40 ( 0 .05 6)
2. 40 (0 .09 5) M AX . 0.80 ( 0.032) 0. 40 (0 .21 3)
MAX .
1. 00 (0 .039) 10. 94 ( 0.430) 10 .86 (0 .427 )
Dimensions in millimeters and inches
60APU04PbF
BASE COMMON CATHODE 2
15 .90 (0 .626 ) 15 .30 (0 .602 )
3. 65 (0 .14 4) 3. 55 (0 .13 9)
DIA.
5. 30 (0 .20 9) 4.70 ( 0.185) 2.5 ( 0.098)
1.5 ( 0.059)
5. 70 (0 .22 5) 5.30 ( 0.208) 20 .30 (0 .800 )
ANODE 1 ANODE 3
19 .70 (0 .775 )
5.50 ( 0.217) 4. 50 ( 0 .17 7) 1 2 3 (2 PLCS.)
14. 80 ( 0.583)
14 .20 (0 .559 )
4. 30 (0 .17 0) 3. 70 (0 .14 5) 2. 20 (0 .08 7) 2. 40 (0 .09 5) M AX . 0.80 ( 0.032) 0. 40 (0 .21 3)
1. 40 (0 .05 6)
M AX .
1. 00 (0 .03 9) 10. 94 ( 0.430) 10 .86 (0 .427 )
6
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60EPU04PBF, 60APU04PbF
Bulletin PD-21080 08/05
Marking Information
EXAMPLE: THIS IS A 60EPU04 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN ASSEMBLY LINE "H"
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
PART NUMBER
60EPU04
P035H
56
57
DATE CODE P = LEAD-FREE YEAR 0 = 2000 WEEK 35 LINE H
EXAMPLE: THIS IS A 60APU04 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN ASSEMBLY LINE "H"
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
PART NUMBER
60APU04
P035H
56
57
DATE CODE P = LEAD-FREE YEAR 0 = 2000 WEEK 35 LINE H
Ordering Information Table
Device Code
60
1 1 2 -
E
2
P
3
U
4
04 PbF
5 6
Current Rating (60 = 60A) Circuit Configuration: E = Single Diode A = Single Diode, 3 pins
3 4 5 6
-
Package: P = TO-247AC (Modified) Type of Silicon: U = UltraFast Recovery Voltage Rating (04 = 400V) none = Standard Production PbF = Lead-Free
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7
60EPU04PBF, 60APU04PbF
Bulletin PD-21080 08/05
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 08/05
8
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